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NUP1105LT1G, SZNUP1105LT1G
MAXIMUM RATINGS (T J = 25 ° C, unless otherwise specified)
Symbol
PPK
T J
T J
T L
ESD
Rating
Peak Power Dissipation
8 x 20 m s Double Exponential Waveform (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Lead Solder Temperature (10 s)
Human Body model (HBM)
Machine Model (MM)
IEC 61000 ? 4 ? 2 Specification (Contact)
Value
350
? 55 to 150
? 55 to 150
260
16
400
30
Unit
W
° C
° C
° C
kV
V
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non-repetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C, unless otherwise specified)
Symbol
V RWM
Parameter
Reverse Working Voltage
(Note 2)
Test Conditions
Min
24
Typ
Max
Unit
V
V BR
I R
V C
V C
I PP
CJ
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
I T = 1 mA (Note 3)
V RWM = 24 V
I PP = 5 A (8 x 20 m s Waveform) (Note 4)
I PP = 8 A (8 x 20 m s Waveform) (Note 4)
8 x 20 m s Waveform (Note 4)
V R = 0 V, f = 1 MHz (Anode to GND)
V R = 0 V, f = 1 MHz (Anode to Anode)
25.7
15
28.4
100
40
44
8.0
60
30
V
nA
V
V
A
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V BR is measured at pulse test current I T .
4. Pulse waveform per Figure 1.
5. Include SZ-prefix devices where applicable.
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